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RSF014N03
Transistors
Electrical characteristics curves
I D = 1.4A
R G = 10 ?
1000
100
Ta = 25 ° C
f = 1MHz
V GS = 0V
C iss
1000
100
t f
Ta = 25 ° C
V DD = 15V
V GS = 10V
R G = 10 ?
Pulsed
10
Ta = 25 ° C
9 V DD = 15V
8
7 Pulsed
6
t d (off)
5
10
C oss
C rss
10
t d (on)
4
3
2
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V DS (V)
1
0.01
t r
0.1
1
10
1
0
0
1
2
3
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1
V DS = 10V
Pulsed
Ta = 125 ° C
1000
Ta = 25 ° C
900 Pulsed
800
10
V GS = 0V
Pulsed
0.1
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
700
600
500
I D =0.7A
I D =1.4A
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
400
0.01
300
200
100
0.1
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
GATE SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance
vs. Gate-Source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
V GS = 10V
10000
V GS = 4.5V
10000
V GS = 4V
Pulsed
Pulsed
Pulsed
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
100
100
100
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙ )
DRAIN CURRENT : I D (A)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙΙ )
Rev.B
3/4
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